Semiconductor Material and Device Characterization

Schroder, Dieter K.

ISBN 10: 0471511048 / ISBN 13: 9780471511045

Edité par Wiley & Sons, Incorporated, John, 1990

A propos de cet article

Former library book; may include library markings. Used book that is in clean, average condition without any missing pages.

N° de réf. du vendeur 7648326-75

Détails bibliographiques

• Titre: Semiconductor Material and Device Characterization
• Éditeur: Wiley & Sons, Incorporated, John
• Date de parution: 1990
• Langue: anglais
• ISBN à 10 chiffres: 0471511048
• ISBN à 13 chiffres: 9780471511045
• Reliure: Couverture rigide
• État de l'article: Good

A propos de ce titre

Synopsis

This detailed sourcebook provides an up-to-date description and unified treatment of the characterization techniques used in the semiconductor industry. It covers electrical, optical, electron- beam, ion-beam, X-ray and gamma ray methods. This information, until now scattered in journals and review papers, is presented in a unified manner with over 1300 references. It is also a valuable reference book on characterization methods.

Présentation de l'éditeur

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up–to–date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition , including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers′ understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge–Based and Probe Characterization introduces charge–based measurement and Kelvin probes. This chapter also examines probe–based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress–induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor′s Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.