Solid State Electronic Devices

Ben G. Streetman

ISBN 10: 0131587676 / ISBN 13: 9780131587670

Edité par Prentice Hall, 1995

A propos de cet article

Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc.

N° de réf. du vendeur 00086832297

Détails bibliographiques

• Titre: Solid State Electronic Devices
• Éditeur: Prentice Hall
• Date de parution: 1995
• Langue: anglais
• ISBN à 10 chiffres: 0131587676
• ISBN à 13 chiffres: 9780131587670
• Reliure: Couverture rigide
• Édition: 4ème Édition
• État de l'article: Good

A propos de ce titre

Synopsis

Aiming to provide students with a sound understanding of existing devices in order to develop the basic tools with which they can later learn about applications and the latest devices, this study incorporates the basics of semiconductor materials and conduction processes in solids. It also introduces and relates the most commonly used semiconductor terms and concepts to a broad range of devices. In addition, the work presents the study of solid state devices including both silicon and compound semiconductors so that undergraduate students may appreciate the continuing growth in importance of exciting optoelectronic and high-speed device applications.

Quatrième de couverture

This book is designed to help readers gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides the user with a sound understanding of existing devices, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The piece provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices.

FEATURES/BENEFITS

• NEW—Thoroughly updated to reflect the most current trends in the technology and theoretical understanding of devices.
• NEW—Expanded description of silicon Czochralski growth, wafer production, and vapor phase epitaxy (Ch. 1).
• NEW—Clearer discussion of chemical bonding, energy band formation and hole transport (Chs. 2, 3 and 4).
• NEW—Consolidated coverage of p-n junction diodes and its applications (Ch. 5).
• NEW—Greatly expanded/updated discussion of device fabrication processes (Ch. 5 and appendices).
• NEW—Earlier discussion of MOS devices (Ch. 6)—Ahead of bipolar junction transistors—reflects the preponderance of complementary MOS field effect transistors (MOSFETs) in integrated circuits today.
• NEW—Major revision of chapter on Field Effect Transistors (Ch. 6)—Both in the underlying theory as well as discussion of a variety of short channel, high field and hot carrier effects in scaled, ultra-small MOSFETs. Includes extensive discussions of the current-voltage and capacitance-voltage characteristics of these devices—and the information that can be gleaned from such measurements.
• NEW—Updated chapter on Bipolar Junction Transistors (BJTs) (Ch. 7)—To reflect current technology. Describes higher-order effects (including the Kirk effect and Webster effect); discusses the Gummel-Poon model (which is more elaborate and physically more accurate than the Ebers-Moll model); and updates the fabrication aspects of BJTs.
• NEW—Consolidated coverage of optoelectronic devices in a single chapter (Ch. 8)—Brings the discussion of semiconductor lasers into the same chapter as LEDs and detectors
• Reflects the growing importance of optoelectronics.
• NEW—Updated coverage of integrated circuits (Ch. 9)—Eliminates outdated material on bipolar processes to reflect the concerted shift to CMOS applications, such as logic and memory integrated circuits.
• NEW—A section on the insulated gate bipolar transistor (Ch. 11)—A device that is gradually supplanting the semiconductor-controlled rectifier.
• NEW—Real data—Wherever feasible, replaces idealized current-voltage and capacitance-voltage plots with real data.