Swift Heavy Ion induced effects in III-V compound semiconductors: Ion beam modification studies of GaAs and GaN semiconductors. Cet article n’est pas disponible.Swift Heavy Ion induced effects in III-V compound semiconductors: Ion beam modification studies of GaAs and GaN semiconductors

This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed.

This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed.