Modelling of Transport Phenomena in Crystal Growth (Developments in Heat Transfer Series)

K. Suzuki; J. Szmyd

ISBN 10: 1853127353 / ISBN 13: 9781853127359

Edité par WIT Press / Computational Mechanics, 2000

A propos de cet article

a very good hardcover; an ex-library copy with usual markings; internally pages bright and clean; ---------- SATISFACTION GUARANTEED --------- FAST, COURTEOUS SERVICE ------ ALL ORDERS SHIPPED WITH DELIVERY CONFIRMATION; Size: 6 x 9". N° de réf. du vendeur K58349EL2

Détails bibliographiques

Titre : Modelling of Transport Phenomena in Crystal ...

Éditeur : WIT Press / Computational Mechanics

Date d'édition : 2000

Reliure : Hard Cover

Etat : Very Good

Edition : First Edition.

Type de livre : Ex-Library

A propos de ce titre

Synopsis :

The large crystals of semiconducting and superconducting materials used for electronic and optical devices are usually grown from the melt by Czochralski or Bridgman method and their quality is significantly affected by the melt flow and related heat and mass transfer. Recent intensive research activities in this area covering crystal growth in microgravity, crystal growth of superconducting materials, crystal growth in high pressure, the commercial development of pullers that can produce crystals with large diameters etc. have substantially raised the expectation for numerous new practical applications. An addition to the existing literature, this book represents the collective work of experts from five countries on the melt flow and related heat and mass transfer in the crystal growth system.