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D�tails bibliographiques

Titre

Modelling of Transport Phenomena in Crystal Growth (Developments in Heat Transfer Series)

�diteur

WIT Press / Computational Mechanics

Date de parution

2000

Langue

anglais

ISBN � 10 chiffres

1853127353

ISBN � 13 chiffres

9781853127359

Reliure

Hard Cover

�dition

First Edition.

�tat de l'article

Very Good

Type de livre

Ex-Library

Catalogues du vendeur

Science

A propos de ce titre

Synopsis

The large crystals of semiconducting and superconducting materials used for electronic and optical devices are usually grown from the melt by Czochralski or Bridgman method and their quality is significantly affected by the melt flow and related heat and mass transfer. Recent intensive research activities in this area covering crystal growth in microgravity, crystal growth of superconducting materials, crystal growth in high pressure, the commercial development of pullers that can produce crystals with large diameters etc. have substantially raised the expectation for numerous new practical applications. An addition to the existing literature, this book represents the collective work of experts from five countries on the melt flow and related heat and mass transfer in the crystal growth system.

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