Semiconductor Material and Device Characterization - Couverture rigide

Schroder, DK

Couverture rigide

ISBN 10 : 0471511048 ISBN 13 : 9780471511045

Editeur : John Wiley & Sons Inc, 1990

Synopsis

This detailed sourcebook provides an up-to-date description and unified treatment of the characterization techniques used in the semiconductor industry. It covers electrical, optical, electron- beam, ion-beam, X-ray and gamma ray methods. This information, until now scattered in journals and review papers, is presented in a unified manner with over 1300 references. It is also a valuable reference book on characterization methods.

A propos du livre

Présentation de l'éditeur

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up–to–date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition , including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers′ understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge–Based and Probe Characterization introduces charge–based measurement and Kelvin probes. This chapter also examines probe–based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress–induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor′s Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Présentation de l'éditeur

Semiconductor Material and Device Characterization is the only book on the market devoted to the characterization techniques used by the modern semiconductor industry to measure diverse semiconductor materials and devices. It covers the full range of electrical and optical characterization methods while thoroughly treating the more specialized chemical and physical techniques.

This newly revamped and expanded Second Edition incorporates the many innovations that have come to dominate the field during the past decade. From scanning probe techniques to the detection of metallic impurities in silicon wafers to the use of microwave reflection to measure contactless resistivity, each chapter presents state–of–the–art tools and techniques, most of which were in their infancy or had not yet been developed when the previous edition first came out. Featured here are:
∗ An entirely new chapter on reliability and probe microscopy
∗ Numerous examples and end–of–chapter problems – new to this edition
∗ Five hundred illustrations revised for this edition
∗ Updated bibliography with over 1,200 references
∗ Easy–to–use text including a real–world mix of units rather than strictly MKS units.

This practical new edition is ideal for textbook adoptions at the graduate level and is destined to become an essential reference for research and development teams in the semiconductor industry.

Détails de l'édition

• Éditeur: John Wiley & Sons Inc
• Date d'édition: 1990
• Langue: anglais
• ISBN 10: 0471511048
• ISBN 13: 9780471511045
• Reliure: Relié
• Nombre de pages: 618
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible