Articles liés à Gate Stack and Silicide Issues in Silicon Processing
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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Gate Stack and Silicide Issues in Silicon Processing: Volume 611 (MRS Proceedings)
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Cambridge University Press, 2014
ISBN 10 : 1107413168
ISBN 13 : 9781107413160
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Gate Stack and Silicide Issues in Silicon Processing: Volume 611
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Cambridge University Press, 2014
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ISBN 13 : 9781107413160
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Gate Stack and Silicide Issues in Silicon Processing: Volume 611 (MRS Proceedings)
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Cambridge University Press, 2014
ISBN 10 : 1107413168
ISBN 13 : 9781107413160
Neuf
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Gate Stack and Silicide Issues in Silicon Processing: Volume 611 (MRS Proceedings)
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Cambridge University Press 2014-06-05, 2014
ISBN 10 : 1107413168
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Gate Stack and Silicide Issues in Silicon Processing: Volume 611
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Cambridge University Press, 2014
ISBN 10 : 1107413168
ISBN 13 : 9781107413160
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Gate Stack and Silicide Issues in Silicon Processing
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Cambridge University Press, 2012
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.KlappentextThe MRS Symposium Proceeding series is an internationally recognised reference suitable for research. N° de réf. du vendeur 447218011
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Gate Stack and Silicide Issues in Silicon Processing : Volume 611
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Cambridge University Press, 2014
ISBN 10 : 1107413168
ISBN 13 : 9781107413160
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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. N° de réf. du vendeur 9781107413160
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Gate Stack and Silicide Issues in Silicon Processing: Volume 611 (Paperback)
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Cambridge University Press, Cambridge, 2014
ISBN 10 : 1107413168
ISBN 13 : 9781107413160
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Paperback. Etat : new. Paperback. As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9781107413160
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Gate Stack and Silicide Issues in Silicon Processing: Volume 611 (Paperback)
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Cambridge University Press, Cambridge, 2014
ISBN 10 : 1107413168
ISBN 13 : 9781107413160
Neuf
Paperback
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Paperback. Etat : new. Paperback. As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. N° de réf. du vendeur 9781107413160
Quantité disponible : 1 disponible(s)
Image d'archives
Gate Stack and Silicide Issues in Silicon Processing: Volume 611 (Paperback)
Edité par
Cambridge University Press, Cambridge, 2014
ISBN 10 : 1107413168
ISBN 13 : 9781107413160
Neuf
Paperback
Vendeur : Grand Eagle Retail, Fairfield, OH, Etats-Unis
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Paperback. Etat : new. Paperback. As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. N° de réf. du vendeur 9781107413160
Quantité disponible : 1 disponible(s)