Articles liés à Atomic Scale Characterization and First-Principles...
Synopsis
This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
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Présentation de l'éditeur
This book offers results that influence many high temperature and pressure applications. It provides findings that will offer increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (eng)
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Atomic Scale Characterization and First-Principles Studies of SiaNa Interfaces
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PF. Etat : New. This item is printed on demand. Brand new book, sourced directly from publisher. Dispatch time is 6-7 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely. N° de réf. du vendeur 6666-IUK-9781461428572
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Atomic Scale Characterization and First-Principles Studies of Si3n4 Interfaces
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Etat : New. N° de réf. du vendeur 19714130-n
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Atomic Scale Characterization and First-Principles Studies of Si3n4 Interfaces
Edité par
Springer, 2013
ISBN 10 : 1461428572
ISBN 13 : 9781461428572
Ancien ou d'occasion
Couverture souple
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Edité par
Springer, Springer Mai 2013, 2013
ISBN 10 : 1461428572
ISBN 13 : 9781461428572
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. 124 pp. Englisch. N° de réf. du vendeur 9781461428572
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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces
Edité par
Springer New York, 2013
ISBN 10 : 1461428572
ISBN 13 : 9781461428572
Neuf
Couverture souple
Vendeur : moluna, Greven, Allemagne
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. N° de réf. du vendeur 9781461428572
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Vendeur : preigu, Osnabrück, Allemagne
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Taschenbuch. Etat : Neu. Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces | Weronika Walkosz | Taschenbuch | Springer Theses | xiv | Englisch | 2013 | Springer | EAN 9781461428572 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. N° de réf. du vendeur 105911237
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Edité par
Springer, Springer Mai 2013, 2013
ISBN 10 : 1461428572
ISBN 13 : 9781461428572
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ¿¿Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 124 pp. Englisch. N° de réf. du vendeur 9781461428572
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