Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication: From Particle Scale to Feature, Die and Wafer Scales - Couverture souple
Synopsis
1 Introduction.- 2 Review of CMP Modeling.- 3 Material Removal Mechanism in CMP: A Comprehensive Model of Abrasive Particle, Pad Asperity and Wafer Interactions.- 4 Effects of Abrasive Size Distribution in CMP.- 5 Material Removal Regions in CMP: Coupling Effects of Slurry Chemicals, Abrasive Particle Size Distribution and Wafer-Pad Contact Area.- 6 One and Semi-Two Dimensional Feature- and Die-Scale Modeling for the Damascene Process.- 7 Three-Dimensional Feature-Scale Modeling of CMP.- 8 Wafer-Scale Modeling of CMP.- 9 Summary and Future Work.- A Boundary Element Method.- A.1 Introduction.- A.2 Governing Differential Equation of Elastostatics.- A.3 Betti's Reciprocal Theorem and Kelvin's Solution.- A.4 Boundary Integral Equation.- A.5 Numerical Formulation of Boundary Integral Equation.- A.6 System Equations.- A.7 BEM vs. FEM.- A.8 References.
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