For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional multiple-time-instant single-shot technique and a two-beam technique with sub-nanosecond time resolution.
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For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional multiple-time-instant single-shot technique and a two-beam technique with sub-nanosecond time resolution.
Viktor Dubec was born in 1977 in Bratislava, Slovakia. He received his Mag. degree in year 2000 at the Department of Optics and Optoelectronics, Comenius University Bratislava. In 2001 he joined the group for investigation of ESD protection devices at the Institute for Solid State Electronics, Vienna University of Technology, Austria.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional multiple-time-instant single-shot technique and a two-beam technique with sub-nanosecond time resolution. 160 pp. Deutsch. N° de réf. du vendeur 9783838104041
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional multiple-time-instant single-shot technique and a two-beam technique with sub-nanosecond time resolution.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 160 pp. Deutsch. N° de réf. du vendeur 9783838104041
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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional multiple-time-instant single-shot technique and a two-beam technique with sub-nanosecond time resolution. N° de réf. du vendeur 9783838104041
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Taschenbuch. Etat : Neu. Optical Testing of Semiconductor Devices under High Energy Pulses | Advanced Optical Interferometric Methods for Nanosecond Mapping of Semiconductor Devices under High Energy Pulses | Viktor Dubec | Taschenbuch | 160 S. | Deutsch | 2015 | Südwestdeutscher Verlag für Hochschulschriften | EAN 9783838104041 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 101644102
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