Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
I, V. Janardhanam published 14 research articles in referred journals. My research work focuses on fabrication and characterization of high quality Schottky and ohmic contacts to single crystal and compound semiconductors for microelectronic device applications. Now I am working with Dr. C.J. Choi, SPRC, Chonbuk National University, South Korea.
I, V. Janardhanam published 14 research articles in referred journals. My research work focuses on fabrication and characterization of high quality Schottky and ohmic contacts to single crystal and compound semiconductors for microelectronic device applications. Now I am working with Dr. C.J. Choi, SPRC, Chonbuk National University, South Korea.
I, V. Janardhanam published 14 research articles in referred journals. My research work focuses on fabrication and characterization of high quality Schottky and ohmic contacts to single crystal and compound semiconductors for microelectronic device applications. Now I am working with Dr. C.J. Choi, SPRC, Chonbuk National University, South Korea.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication. 144 pp. Englisch. N° de réf. du vendeur 9783844301281
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Janardhanam ValliveduI, V. Janardhanam published 14 research articles in referred journals. My research work focuses on fabrication and characterization of high quality Schottky and ohmic contacts to single crystal and compound semi. N° de réf. du vendeur 5470636
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 144 pp. Englisch. N° de réf. du vendeur 9783844301281
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication. N° de réf. du vendeur 9783844301281
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Studies of Schottky contacts on indium phosphide | Microelectronic device applications | Vallivedu Janardhanam (u. a.) | Taschenbuch | 144 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783844301281 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 107121270
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Vendeur : Buchpark, Trebbin, Allemagne
Etat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication. N° de réf. du vendeur 10284717/2
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Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
Paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book. N° de réf. du vendeur ERICA77338443012836
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