Langue: anglais
Edité par LAP LAMBERT Academic Publishing, 2012
ISBN 10 : 3844301283 ISBN 13 : 9783844301281
Vendeur : preigu, Osnabrück, Allemagne
EUR 51
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Ajouter au panierTaschenbuch. Etat : Neu. Studies of Schottky contacts on indium phosphide | Microelectronic device applications | Vallivedu Janardhanam (u. a.) | Taschenbuch | 144 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783844301281 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
Langue: anglais
Edité par LAP LAMBERT Academic Publishing, 2011
ISBN 10 : 3844301283 ISBN 13 : 9783844301281
Vendeur : Buchpark, Trebbin, Allemagne
EUR 50,59
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Ajouter au panierEtat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.
Langue: anglais
Edité par LAP LAMBERT Academic Publishing, 2011
ISBN 10 : 3844301283 ISBN 13 : 9783844301281
Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
EUR 138,10
Quantité disponible : 1 disponible(s)
Ajouter au panierPaperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Langue: anglais
Edité par LAP LAMBERT Academic Publishing Jan 2011, 2011
ISBN 10 : 3844301283 ISBN 13 : 9783844301281
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
EUR 59
Quantité disponible : 2 disponible(s)
Ajouter au panierTaschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication. 144 pp. Englisch.
Langue: anglais
Edité par LAP LAMBERT Academic Publishing, 2011
ISBN 10 : 3844301283 ISBN 13 : 9783844301281
Vendeur : moluna, Greven, Allemagne
EUR 48,50
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Janardhanam ValliveduI, V. Janardhanam published 14 research articles in referred journals. My research work focuses on fabrication and characterization of high quality Schottky and ohmic contacts to single crystal and compound semi.
Langue: anglais
Edité par LAP LAMBERT Academic Publishing Jan 2011, 2011
ISBN 10 : 3844301283 ISBN 13 : 9783844301281
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
EUR 59
Quantité disponible : 1 disponible(s)
Ajouter au panierTaschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 144 pp. Englisch.
Langue: anglais
Edité par LAP LAMBERT Academic Publishing, 2011
ISBN 10 : 3844301283 ISBN 13 : 9783844301281
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
EUR 59
Quantité disponible : 1 disponible(s)
Ajouter au panierTaschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.