MOS Interface Physics, Process and Characterization 1st Edition

Wang, Shengkai; Wang, Xiaolei

ISBN 10: 1032106271 / ISBN 13: 9781032106274

Edité par H N H International Limited, 2021

A propos de cet article

N° de réf. du vendeur 26384694322

Détails bibliographiques

• Titre: MOS Interface Physics, Process and Characterization 1st Edition
• Éditeur: H N H International Limited
• Date de parution: 2021
• Langue: anglais
• ISBN à 10 chiffres: 1032106271
• ISBN à 13 chiffres: 9781032106274
• Reliure: Couverture rigide
• État de l'article: New

A propos de ce titre

Synopsis

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.

À propos de l?auteur

Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.

Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.