Michal bockowski (27 résultats)

Etat : Good. Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc.

Paperback. Etat : Good. Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.…

Etat : New.

Etat : New.

Taschenbuch. Etat : Neu. Technology of Gallium Nitride Crystal Growth | Dirk Ehrentraut (u. a.) | Taschenbuch | Springer Series in Materials Science | xxii | Englisch | 2012 | Springer | EAN 9783642263897 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Etat : New. In English.

Etat : New. In English.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academiareport in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.…

Etat : New. pp. 350.

Etat : New. pp. 350.

Paperback. Etat : Brand New. 2010 edition. 326 pages. 9.25x6.10x0.82 inches. In Stock.

Hardcover. Etat : Brand New. 1st edition. 326 pages. 9.25x6.25x0.75 inches. In Stock.

Hardcover. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Etat : new. Questo è un articolo print on demand.

Etat : new. Questo è un articolo print on demand.

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academiareport in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. 348 pp. Englisch.…

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Summarizes the current state of the art of GaN growth technologyIntegrates materials science and physical aspectsA reference work for researchers and engineers alikeMay serve as a study text for graduate students in materials science.…

Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Summarizes the current state of the art of GaN growth technologyIntegrates materials science and physical aspectsA reference work for researchers and engineers alikeMay serve as a study text for graduate students in materials science.…

Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academiareport in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. 348 pp. Englisch.…

Buch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academiareport in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.…

Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 348 pp. Englisch.…

Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academiareport in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 348 pp. Englisch.…

Etat : New. Print on Demand pp. 350 200 Illus.

Etat : New. PRINT ON DEMAND pp. 350.

Etat : New. Print on Demand pp. 350 200 Illus.

Etat : New. PRINT ON DEMAND pp. 350.