Modeling and Characterization of RF and Microwave Power FETs

Aaen, Peter H; Pla, Jaime A. And Wood, John

ISBN 10: 0521870666 / ISBN 13: 9780521870665

Edité par Cambridge, Cambridge, 2007

A propos de cet article

No markings. N° de réf. du vendeur 00044259

Détails bibliographiques

Titre : Modeling and Characterization of RF and ...

Éditeur : Cambridge, Cambridge

Date d'édition : 2007

Reliure : Hardcover

Etat : Very Fine

Edition : First Edition

A propos de ce titre

Synopsis :

Book by Aaen Peter

Présentation de l'éditeur:

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.