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D�tails bibliographiques

Titre

PROPERTIES OF LATTICE-MATCHED AND STRAINED, INDIUM GALLIUM ARSENIDE.

�diteur

INSPEC, The Institution of Electrical Engineers, Stevenage, Herts, United Kingdom

Date de parution

1993

Langue

anglais

ISBN � 10 chiffres

0852968655

ISBN � 13 chiffres

9780852968659

Reliure

Hardcover

�dition

1st Edition.

�tat de l'article

Good

�tat de la jaquette

No Jacket

Type de livre

Ex-Library

Catalogues du vendeur

CHEMISTRY

A propos de ce titre

Synopsis

The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Les informations fournies dans la section � A propos du livre � peuvent faire r�f�rence � une autre �dition de ce titre.

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