Edité par Kluwer Academic/Plenum Publishers, 1980
ISBN 10 : 0306403560 ISBN 13 : 9780306403569
Langue: anglais
Vendeur : Ammareal, Morangis, France
Hardcover. Etat : Bon. Ancien livre de bibliothèque. Traces d'usure sur la couverture. Couverture légèrement déchirée. Couverture différente. Edition 1980. Tome 52. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Signs of wear on the cover. Slightly torn cover. Different cover. Edition 1980. Volume 52. Ammareal gives back up to 15% of this item's net price to charity organizations.
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Ajouter au panierTaschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.
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Ajouter au panierhardcover. Etat : Good. Good. book.
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Ajouter au panierEtat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960 s, following the discovery of subs.
Edité par Springer US, Chapman And Hall/CRC Dez 2012, 2012
ISBN 10 : 1468436406 ISBN 13 : 9781468436402
Langue: anglais
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Ajouter au panierTaschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures. 636 pp. Englisch.
Edité par Springer US, Springer New York Dez 2012, 2012
ISBN 10 : 1468436406 ISBN 13 : 9781468436402
Langue: anglais
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Ajouter au panierTaschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.
Edité par Springer-Verlag New York Inc., 2012
ISBN 10 : 1468436406 ISBN 13 : 9781468436402
Langue: anglais
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Ajouter au panierPaperback / softback. Etat : New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days 1223.