Nanda kumar reddy (18 résultats)

Etat : New.

Etat : New.

Taschenbuch. Etat : Neu. A Study on Platinum/Gold Schottky Contacts to n-type Indium Phosphide | Nanda Kumar Reddy Nallabala | Taschenbuch | 80 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9783659451744 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. …

Etat : New.

Taschenbuch. Etat : Neu. Studies on Pt/Ru and Pd/Ru Schottky Contacts to n-type Gallium Nitride | N. Nanda Kumar Reddy (u. a.) | Taschenbuch | 168 S. | Englisch | 2016 | Scholars' Press | EAN 9783659843440 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.…

Paperback. Etat : Brand New. 168 pages. 8.66x5.91x0.38 inches. In Stock.

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Indium phosphide (InP) is an attractive III-V compound semiconductor for high speed metal-semiconductor field effect transistors (MESFETS) and optical devices. Due to certain attractive features of InP over GaAs, such as high electron mobility, better thermal conductivity, higher breakdown field have become a material of considerable interest for microwave and photonic applications in recent years. The III-V compound semiconductors have been investigated extensively during the past decade because of both fundamental and technological importance. Among them, InP is known to have a higher drift velocity which makes it as a material of strong potential use in high-frequency transistors, solar and photovoltaic cells and integrated optoelectronic devices. The choice of InP as a substrate for these devices originates from the fact that it has an optimum band gap for photovoltaic energy conversion and a large mobility required for high speed devices.In the present work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/Pt/n-type InP Schottky barrier diodes have been investigated in the temperature range 210-420 K. 80 pp. Englisch.…

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Nallabala Nanda Kumar ReddyDr. N. Nanda Kumar Reddy presently working as an Assistant Professor of Physics at Madanapalle Institute of Technology and Science (MITS), Madanapalle, Andhra Pradesh, India. He received his B.Sc, M.Sc, M.P. …

Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Indium phosphide (InP) is an attractive III-V compound semiconductor for high speed metal-semiconductor field effect transistors (MESFETS) and optical devices. Due to certain attractive features of InP over GaAs, such as high electron mobility, better thermal conductivity, higher breakdown field have become a material of considerable interest for microwave and photonic applications in recent years. The III-V compound semiconductors have been investigated extensively during the past decade because of both fundamental and technological importance. Among them, InP is known to have a higher drift velocity which makes it as a material of strong potential use in high-frequency transistors, solar and photovoltaic cells and integrated optoelectronic devices. The choice of InP as a substrate for these devices originates from the fact that it has an optimum band gap for photovoltaic energy conversion and a large mobility required for high speed devices.In the present work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/Pt/n-type InP Schottky barrier diodes have been investigated in the temperature range 210-420 K.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 80 pp. Englisch.…

Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Indium phosphide (InP) is an attractive III-V compound semiconductor for high speed metal-semiconductor field effect transistors (MESFETS) and optical devices. Due to certain attractive features of InP over GaAs, such as high electron mobility, better thermal conductivity, higher breakdown field have become a material of considerable interest for microwave and photonic applications in recent years. The III-V compound semiconductors have been investigated extensively during the past decade because of both fundamental and technological importance. Among them, InP is known to have a higher drift velocity which makes it as a material of strong potential use in high-frequency transistors, solar and photovoltaic cells and integrated optoelectronic devices. The choice of InP as a substrate for these devices originates from the fact that it has an optimum band gap for photovoltaic energy conversion and a large mobility required for high speed devices.In the present work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/Pt/n-type InP Schottky barrier diodes have been investigated in the temperature range 210-420 K.…

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The recent strong interest in obtaining devices with high temperature functioning, high switching speed and high power performances has focused research attention on new wide band gap materials. Among them, gallium nitride (GaN) has gained attention due to its high band gap value (~3.4 eV at room temperature) that makes it goes intrinsic at much higher temperature than Si, but also due to its high saturation velocity (higher than for SiC) and high critical electric field allowing to reach larger breakdown voltage values. For the last few years, it has already found applications in topics such as optoelectronic devices, blue to green light emitting diodes (LEDs), laser diodes (LDs), detectors and high electron mobility transistors (HEMTs). 168 pp. Englisch. …

Etat : New. Print on Demand.

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Reddy N. Nanda KumarDr.N.Nanda Kumar Reddy presently working as Assistant Professor in Department of Physics, Madanapalle Institute of Technology and Science, Angallu, Madanapalle, Chtittoor(Dist.), A.P, India. He received his Ph.D . …

Etat : New. Print on Demand.

Etat : New. PRINT ON DEMAND.

Etat : New. PRINT ON DEMAND.

Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The recent strong interest in obtaining devices with high temperature functioning, high switching speed and high power performances has focused research attention on new wide band gap materials. Among them, gallium nitride (GaN) has gained attention due to its high band gap value (~3.4 eV at room temperature) that makes it goes intrinsic at much higher temperature than Si, but also due to its high saturation velocity (higher than for SiC) and high critical electric field allowing to reach larger breakdown voltage values. For the last few years, it has already found applications in topics such as optoelectronic devices, blue to green light emitting diodes (LEDs), laser diodes (LDs), detectors and high electron mobility transistors (HEMTs).VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 168 pp. Englisch. …

Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The recent strong interest in obtaining devices with high temperature functioning, high switching speed and high power performances has focused research attention on new wide band gap materials. Among them, gallium nitride (GaN) has gained attention due to its high band gap value (~3.4 eV at room temperature) that makes it goes intrinsic at much higher temperature than Si, but also due to its high saturation velocity (higher than for SiC) and high critical electric field allowing to reach larger breakdown voltage values. For the last few years, it has already found applications in topics such as optoelectronic devices, blue to green light emitting diodes (LEDs), laser diodes (LDs), detectors and high electron mobility transistors (HEMTs). …