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Etat : New.

Paperback or Softback. Etat : New. Chemical Mechanical Polishing Optimization for 4H-Sic. Book.

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PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000.

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Hardback or Cased Book. Etat : New. Chemical Mechanical Polishing Optimization for 4H-Sic. Book.

Hardback. Etat : New.

HRD. Etat : New. New Book. Shipped from UK. Established seller since 2000.

Etat : As New. Unread book in perfect condition.

HRD. Etat : New. New Book. Shipped from UK. Established seller since 2000.

Etat : New.

Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : As New. Unread book in perfect condition.

Taschenbuch. Etat : Neu. Neuware - Scratch free surfaces are required for substrates used in epitaxial growth. Silicon carbide (SiC) is a substrate material that is used in the epitaxial growth of SiC, GaN, and InGaN electronic devices. Preliminary chemical mechanical polishing (CMP) studies of 1 3/8' 4H-SiC wafers were performed in an attempt to identify the polishing parameter values that result in a maximum material removal rate and thus reduce substrate polishing time. Previous studies reported increased material removal rates associated with increasing polishing temperature, slurry pH, pressure, and polishing pad speed. In the current study, the effects of temperature, slurry pH, polishing pressure, and polishing pad speed were examined independently while keeping other polishing parameters constant. Material removal rates were determined using pre and post-polish wafer mass measurements. Photographs at specific wafer locations were obtained before and after each polishing period and compared to calculated removal rates.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.…

Buch. Etat : Neu. Neuware - Scratch free surfaces are required for substrates used in epitaxial growth. Silicon carbide (SiC) is a substrate material that is used in the epitaxial growth of SiC, GaN, and InGaN electronic devices. Preliminary chemical mechanical polishing (CMP) studies of 1 3/8' 4H-SiC wafers were performed in an attempt to identify the polishing parameter values that result in a maximum material removal rate and thus reduce substrate polishing time. Previous studies reported increased material removal rates associated with increasing polishing temperature, slurry pH, pressure, and polishing pad speed. In the current study, the effects of temperature, slurry pH, polishing pressure, and polishing pad speed were examined independently while keeping other polishing parameters constant. Material removal rates were determined using pre and post-polish wafer mass measurements. Photographs at specific wafer locations were obtained before and after each polishing period and compared to calculated removal rates.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant. …

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Etat : New. Print on Demand pp. 110.