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Etat : New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Etat : New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.

Etat : New.

Softcover, staple-bound, 24 pages with 10 tipped in plates; in German. very good condition; clean and crisp; no internal marks. Tissue errata slip is missing.

Paperback. Etat : New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

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Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : As New. Unread book in perfect condition.

Paperback / softback. Etat : New. New copy - Usually dispatched within 4 working days.

Paperback. Etat : Brand New. 2nd new edition. 400 pages. 9.25x6.14x0.87 inches. In Stock.

Hardcover. Etat : Very Good. No Jacket. Former library book; May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less.

Etat : As New. Unread book in perfect condition.

Kartoniert / Broschiert. Etat : New.

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Etat : very_good. This book is in Very good condition. There may be a few flaws like shelf wear and some light wear.

Etat : New.

Etat : As New. Unread book in perfect condition.

Taschenbuch. Etat : Neu. Neuware.

Taschenbuch. Etat : Neu. Gallium Nitride and Related Materials | Device Processing and Materials Characterization for Power Electronics Applications | Isik C. Kizilyalli (u. a.) | Taschenbuch | The Materials Research Society Series | xxix | Englisch | 2026 | Springer | EAN 9783031830587 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy's Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development.The book includes an overview of GaN power electronic devices and systems and a comprehensive review of the key vertical device processing challenges ( Part I ), detailed descriptions of bulk GaN substrate technology ( Part II ), discussions of the challenges in GaN epitaxial growth and processing ( Part III ), an in-depth examination of approaches and challenges in GaN selective area p-type doping with an eye towards mechanistic understanding ( Part IV ), an overview of innovative material characterization techniques developed to understand the device processing challenges ( Part V ), an analysis of the fundamental materials properties of GaN in relation to its use in power electronics ( Part VI ), a discussion of related earlier stage nitride wide bandgap materials development and application in power electronics and other applications ( Part VII ), and concludes with a forward-looking discussion of the areas that still need research and development to push the limits of power electronics to utilize wide bandgap semiconductors along with potential high impact application areas ( Part VIII ).This book is intended to be an essential reference for anyone working in either basic research or advanced development of vertical architecture GaN power electronics and technologies. It is anticipated this book will become a go-to reference for any scientist and engineer working in any nitride semiconductor material seeking an updated coverage of the state-of-the-art processing and characterization techniques that will push GaN know-how to new materials and device frontiers.…

Etat : New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

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Hardcover. Etat : Brand New. 715 pages. 9.25x6.10x9.21 inches. In Stock.

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Hardcover. Etat : New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

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Gebunden. Etat : New.

Hardcover. Etat : new. Hardcover. This volume provides the reader with an overview of the diverse functions of the RUNX family of genes. As highlighted in the introduction and several of the 29 chapters, humans and other mammals have three RUNX genes that are known to play specific roles in blood, bone and neuronal development. However, their evolutionary history has recently been traced back to unicellular organisms and their involvement in many well-known signaling pathways (Wnt, TGFb, Notch, Hippo) is indicative of a more general function in cell biology. Their documented roles in cell fate decisions include control of proliferation, differentiation, survival, senescence and autophagy.The pleiotropic effects of RUNX in development are mirrored in cancer, where RUNX genes can function as oncogenes that collaborate strongly with Myc family oncogenes or as tumour suppressor genes. In the latter role, they display hallmarks of both gatekeepers that modulate p53 responses and caretakers that protect the genome from DNA damage. Several chapters focus on the importance of these genes in leukemia research, where RUNX1 and CBFB are frequently affected by chromosomal translocations that generate fusion oncoproteins, while recent studies suggest wider roles for RUNX modulation in solid cancers. Moreover, RUNX genes are intimately involved in the development and regulation of the immune system, while emerging evidence suggests a role in innate immunity to infectious agents, including HIV. At the biochemical level, the RUNX family can serve as activators or repressors of transcription and as stable mediators of epigenetic memory through mitosis. Not surprisingly, RUNX activity is controlled at multiple levels, this includes miRNAs and a plethora of post-translational modifications. Several chapters highlight the interplay between the three mammalian RUNX genes, where cross-talk and partial functional redundancies are evident. Finally, structural analysis of the RUNX/CBFB interaction has led to the development of small molecule inhibitors that provide exciting new tools to decipher the roles of RUNX in development and as targets for therapy.This volume provides a compendium and reference source that will be of broad interest to cancer researchers, developmental biologists and immunologists. Their documented roles in cell fate decisions include control of proliferation, differentiation, survival, senescence and autophagy.The pleiotropic effects of RUNX in development are mirrored in cancer, where RUNX genes can function as oncogenes that collaborate strongly with Myc family oncogenes or as tumour suppressor genes. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. …