Compound semiconductor materials devices (34 résultats)

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Hardcover. Etat : New. Compound Semiconductor Materials and Devices: Volume 1635 (MRS Proceedings) Brand new item sourced directly from publisher. Packed securely in tight packaging to ensure no damage. Shipped from warehouse on same/next day basis.

Original Boards. Etat : As New. No Dust Jacket. First Edition; First Edition. 135 pages. With illustrations. Stamped Damaged on verso title page. Light shelfwear. Otherwise new.; Hardcover; Octavo; Compound semiconductors impact our lives in countless ways, with applications in photovoltaics, wireless and optical telecommunication, high-power electronics, and 'green' energy. Recent areas of progress include sensing devices in biological and chemical environments, high-efficiency power devices, and photon-counting detectors. Although these materials offer significant advantages, including bandgap tailorability, high efficiency, high-temperature operation, and radiation tolerance, much work needs to be done to realize their full potential. This symposium proceedings volume represents recent advances in compound semiconductors for electronics, detection, and processing. It brings together researchers and engineers working on both fundamental materials research and device-related materials engineering, in order to address current problems and identify next-generation applications. This selection of papers demonstrates the cross-fertilization of ideas that will drive the successful adoption of these materials for new applications. …

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.…

Taschenbuch. Etat : Neu. Compound Semiconductor Materials and Devices | Zhaojun Liu (u. a.) | Taschenbuch | Synthesis Lectures on Emerging Engineering Technologies | vii | Englisch | 2016 | Springer | EAN 9783031009006 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

paperback. Etat : New. Language:Chinese.Paperback. Pages Number : 0 Publisher: Electronic Science and Technology Pub. Date :2000-09-01. This book includes compound semiconductor transient carrier transport. two-dimensional electron gas. superlattices. heterostructures. impurities and defects and other basic theory. and the preparation of compound semiconductor materials technology and new ultra-high frequency. ultra high-speed devices (HEMT. HBT. quantum resonant devices) and have an important future development of.…

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Etat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

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Buch. Etat : Neu. Neuware - One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D-2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed. …

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Etat : New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 6-10 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.…

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paperback. Etat : New. Paperback. Pub Date :2008-11-11 Pages: 984 Publisher: Unknown containing every chapter of the telephone number. address. zip code. EmaiI.