field effect self mixing terahertz detectors de sun jiandong (36 résultats)

Etat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.

24 cm. xviii, 126 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.

Buch. Etat : Neu. Neuware -A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 144 pp. Englisch.

Etat : New.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.

Etat : New.

Etat : New.

Etat : New.

Etat : New. pp. 126.

Etat : New. pp. 120.

Etat : New.

Etat : As New. Unread book in perfect condition.

Etat : As New. Unread book in perfect condition.

Etat : New. Series: Springer Theses. Num Pages: 144 pages, 4 black & white illustrations, 80 colour illustrations, 55 colour tables, biography. BIC Classification: PNFS; TJFD5; TJFN; TTB. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 10. Weight in Grams: 385. . 2016. Hardback. . . . .

Etat : New. 2018. Paperback. . . . . .

Etat : As New. Unread book in perfect condition.

Etat : As New. Unread book in perfect condition.

Hardcover. Etat : Brand New. 146 pages. 9.50x6.25x0.75 inches. In Stock.

Etat : New. Series: Springer Theses. Num Pages: 144 pages, 4 black & white illustrations, 80 colour illustrations, 55 colour tables, biography. BIC Classification: PNFS; TJFD5; TJFN; TTB. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 10. Weight in Grams: 385. . 2016. Hardback. . . . . Books ship from the US and Ireland.

Etat : New. 2018. Paperback. . . . . . Books ship from the US and Ireland.

Etat : New.

Etat : New.

Paperback. Etat : new. Paperback. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Hardcover. Etat : new. Hardcover. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Paperback. Etat : new. Paperback. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Hardcover. Etat : new. Hardcover. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Nominated as an Outstanding Ph.D. thesis by the Chinese Academy of SciencesBuilt a comprehensive field-effect terahertz detector model which is applicable for detector optimizationPresents for the tim.