mesoscopic physics electronics (10 résultats)

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Taschenbuch. Etat : Neu. Mesoscopic Physics and Electronics | Tsuneya Ando (u. a.) | Taschenbuch | xiv | Englisch | 2011 | Springer | EAN 9783642719783 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system. 300 pp. Englisch.

Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book gives general reviews on various subjects in the interdisciplinary field between pure physics, device physics, and materials research concerning quantum structures, such as quantum wires, dots, antidots, etc. and discusses their future prospects. It also provides a general introduction of physics of mesoscopic systems and might be used as an introductory textbook for graduate students.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 300 pp. Englisch.