quantum dot photodetectors (73 résultats)

xiii, 63 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

1st ed. 2021. XII, 311 p. Hardcover. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Lecture Notes in Nanoscale Science and Technology, 30. Sprache: Englisch.

Etat : New.

Paperback. Etat : Brand New. 52 pages. 8.66x5.91x0.12 inches. In Stock.

Etat : New. pp. 128.

Taschenbuch. Etat : Neu. Neuware -The achievements of low cost and size infrared photodetectors have allowed them to become ubiquitous consumer products.The challenges of photodetector technologies with the potential to meet the application requirements in the near future suggest the development of new physical phenomena and novel material system based photodetectors. Quantum confined structures possess a great potential for surpassing the traditional boundaries of bulk semiconductor devices. This book reviews the state-of-the-art infrared photodetectors based on quantum wells and quantum dots as well as dominant material systems used for them. Also, InAs-InSb-InP material system is suggested for fabrication of quantum dot mid-infrared photodetectors. The growth, electrical and optical properties of those photodetectors are presented. The obtained results open up new prospects, especially, for photodetectors operating at room temperature.Books on Demand GmbH, Überseering 33, 22297 Hamburg 52 pp. Englisch.

Etat : New. pp. 196.

Taschenbuch. Etat : Neu. InAsSbP quantum dot mid-IR photodetectors | Vardan Harutyunyan | Taschenbuch | 52 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659968952 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Etat : Neu. Quantum Structure Infrared Photodetectors: Charge Transport and Noise | Noise Measurement, Analysis and Charge Transport Modeling in Quantum Well and Quantum Dot Infrared Photodetectors | Riccardo Introzzi (u. a.) | Taschenbuch | 100 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838372358 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Etat : Neu. Neuware -Most of the currently available infrared photodetectors are of either the mercury cadmium telluride (HgCdTe) or quantum well infrared photodetectors (QWIPs) types. Both of these systems have certain drawbacks that have led to the search for better infrared photodetectors. Quantum dot infrared photodetectors (QDIPs) have been studied theoretically and experimentally, and are expected to surpass HgCdTe infrared photodetectors and QWIPs. Although QDIPs are promising candidates for the next generation infrared photodetectors, there are no reliable theoretical models that describe the performance characteristics of this devices. The purpose of the presented book is to fill some of the gaps by presenting theoretical models to two important parameters of the QDIPs, namely the dark current and the absorption coefficient. The model for the dark current is based on a generalized drift diffusion model while the model for the absorbtion is based on NEGF formulation. The models have shown good agreements with experimental results.Books on Demand GmbH, Überseering 33, 22297 Hamburg 128 pp. Englisch.

Taschenbuch. Etat : Neu. Dark Current and Absorption of Quantum Dot Infrared Photodetectors | Theoretical modeling for the dark current and the absorption coefficient of QDIPs | Tarek Ameen | Taschenbuch | 128 S. | Englisch | 2014 | LAP LAMBERT Academic Publishing | EAN 9783659574610 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Etat : Neu. Theoretical modeling of quantum dot infrared photodetectors | Modeling and optimization of self-assembled quantum dot infrared photodetectors using non-equilibrium Green's function | Mohamed Naser | Taschenbuch | Englisch | VDM Verlag Dr. Müller | EAN 9783639334470 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Etat : New. Softcover reprint of the original 1st ed. 2018 edition NO-PA16APR2015-KAP.

Etat : New. 1st ed. 2018 edition NO-PA16APR2015-KAP.

paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Etat : New. Softcover reprint of the original 1st ed. 2018 edition NO-PA16APR2015-KAP.

Taschenbuch. Etat : Neu. Neuware -This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that wasobtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 80 pp. Englisch.

Buch. Etat : Neu. Neuware -This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that wasobtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 80 pp. Englisch.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that wasobtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that wasobtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.

Etat : New.

Etat : New.

Etat : New.

Paperback. Etat : Brand New. reprint edition. 84 pages. 9.25x6.10x0.19 inches. In Stock.

Paperback. Etat : Brand New. reprint edition. 80 pages. 9.25x6.10x0.19 inches. In Stock.

Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : As New. Unread book in perfect condition.