quantum semiconductor devices technologies (28 résultats)

Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : New.

Paperback. Etat : Brand New. 370 pages. 9.45x6.69x0.78 inches. In Stock.

Etat : New. 1st edition NO-PA16APR2015-KAP.

Etat : new.

Etat : Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,650grams, ISBN:9780792377481.

Etat : New.

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Etat : New.

Gebunden. Etat : New.

Etat : New. Introduces the fundamentals along with topics ranging from quantum nanocircuits and the potential applications of self-formed quantum dot structures, through the use of MOVPE to produce quantum structured semiconductors, lithography and patterning and the structural characterization of self-organized Ge-islands. Editor(s): Pearsall, Tom. Series: Electronic Materials Series. Num Pages: 273 pages, 77 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 17. Weight in Grams: 576. . 2000. Hardback. . . . .

Taschenbuch. Etat : Neu. Neuware - The work provides fundamental expertise of quantum optics and photonic quantum technology with particular attention to the generation of non-classical light with semiconductor nanostructures. The book is written by experimentalists for experimentalists at various career stages: physics and engineering students, researchers in quantum optics, industry experts in quantum technology. A didactical structure is followed, having in each chapter overview and summary of the discussed topics, allowing for a quick consultation. The book covers: Basics of quantum optics. Spectroscopy, time-resolved measurements, quantum optics techniques. Principles of non-classical light emission. Excitation of semiconductor nanostructures and their manipulation. Growth and nanofabrication of devices. Targeting physics and quantum engineering students as well as research scientists and engineers in academia and industry it provides the practical base for understanding quantum light sources and for evaluating their performances. Thus it enables readers to gain the necessary knowledge to understand, design and test novel quantum light sources for various implementations as quantum key distribution, quantum repeaters, quantum sensors and photonic quantum information processing.

Paperback. Etat : Brand New. 273 pages. 9.30x6.20x0.70 inches. In Stock.

Taschenbuch. Etat : Neu. Quantum Semiconductor Devices and Technologies | Tom Pearsall | Taschenbuch | vii | Englisch | 2014 | Springer US | EAN 9781461370048 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.

Etat : New. Introduces the fundamentals along with topics ranging from quantum nanocircuits and the potential applications of self-formed quantum dot structures, through the use of MOVPE to produce quantum structured semiconductors, lithography and patterning and the structural characterization of self-organized Ge-islands. Editor(s): Pearsall, Tom. Series: Electronic Materials Series. Num Pages: 273 pages, 77 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 17. Weight in Grams: 576. . 2000. Hardback. . . . . Books ship from the US and Ireland.

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.

Etat : As New. Unread book in perfect condition.

Hardcover. Etat : Like New. Like New. book.

Etat : As New. Unread book in perfect condition.

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas. 280 pp. Englisch.

Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas. 284 pp. Englisch.

Buch. Etat : Neu. Quantum Semiconductor Devices and Technologies | Tom Pearsall | Buch | vii | Englisch | 2000 | Springer | EAN 9780792377481 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.

Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 284 pp. Englisch.

Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 280 pp. Englisch.