EUR 35,44
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Ajouter au panierHardcover. Etat : Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
Vendeur : Paisleyhaze Books, New Hartford, CT, Etats-Unis
Edition originale
EUR 35,44
Quantité disponible : 1 disponible(s)
Ajouter au panierHardcover. Etat : Fine. No Jacket. 1st Edition. Springer-Verlag pictorial hardcover sans jacket (as issued), 1989, clean/tight, No marks or signs of use and No "shelf wear"; (Fine). We will bubble wrap the book and ship it in a New BOX- Not a plastic bag like the zombie sellers.
EUR 31,41
Quantité disponible : 1 disponible(s)
Ajouter au panierEtat : Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has soft covers. In good all round condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,600grams, ISBN:9780070021532.
Langue: anglais
Edité par McGraw Hill Higher Education, 1987
ISBN 10 : 0070021074 ISBN 13 : 9780070021075
Vendeur : Ammareal, Morangis, France
EUR 31,29
Quantité disponible : 1 disponible(s)
Ajouter au panierHardcover. Etat : Bon. Ancien livre de bibliothèque avec équipements. Couverture différente. Edition 1987. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Different cover. Edition 1987. Ammareal gives back up to 15% of this item's net price to charity organizations.
Langue: anglais
Edité par World Scientific Publishing Company, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
EUR 54
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : As New. Unread book in perfect condition.
Langue: anglais
Edité par World Scientific Publishing Company, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
EUR 54,31
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New.
Langue: anglais
Edité par World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : Rarewaves.com USA, London, LONDO, Royaume-Uni
EUR 56,66
Quantité disponible : 11 disponible(s)
Ajouter au panierPaperback. Etat : New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Langue: anglais
Edité par World Scientific Publishing Company, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : California Books, Miami, FL, Etats-Unis
EUR 57,59
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New.
Langue: anglais
Edité par World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : Grand Eagle Retail, Bensenville, IL, Etats-Unis
EUR 63,53
Quantité disponible : 1 disponible(s)
Ajouter au panierPaperback. Etat : new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Edition originale
EUR 31,88
Quantité disponible : 1 disponible(s)
Ajouter au panierHardcover. Etat : Very Good. No Jacket. First Edition. Ex library with the usual blemishes. A00000331.
Langue: anglais
Edité par World Scientific Publishing Company, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
EUR 51,55
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New.
Langue: anglais
Edité par World Scientific Publishing Company, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
EUR 58,35
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New. In.
Langue: anglais
Edité par World Scientific Publishing Company, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
EUR 56,92
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : As New. Unread book in perfect condition.
EUR 59,54
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New. In.
EUR 56,39
Quantité disponible : 10 disponible(s)
Ajouter au panierPF. Etat : New.
Edité par Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
Vendeur : Antiquariaat Ovidius, Bredevoort, Pays-Bas
EUR 24
Quantité disponible : 1 disponible(s)
Ajouter au panierEtat : Gebraucht / Used. 1986. Hardcover. xv,222pp.
Langue: anglais
Edité par World Scientific Publishing Company 1/1/1987, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : BargainBookStores, Grand Rapids, MI, Etats-Unis
EUR 81,09
Quantité disponible : 5 disponible(s)
Ajouter au panierPaperback or Softback. Etat : New. Introd to Semiconductor Device Modelling. Book.
EUR 59,04
Quantité disponible : 1 disponible(s)
Ajouter au panierGood. UK stocked, available immediately. Hardcover, published by Springer in 1989. First edition. Very minor rubbing to the printed board covers, the front endpaper has been clipped. The text is unmarked throughout, a nice copy. Illustrated. Weight (unpacked) is 678 grams.
EUR 79,31
Quantité disponible : 4 disponible(s)
Ajouter au panierEtat : New. pp. 300.
Langue: anglais
Edité par World Scientific Pub Co Inc, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : Revaluation Books, Exeter, Royaume-Uni
EUR 73,90
Quantité disponible : 2 disponible(s)
Ajouter au panierPaperback. Etat : Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
EUR 87,97
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : As New. Unread book in perfect condition.
EUR 77,63
Quantité disponible : 2 disponible(s)
Ajouter au panierPaperback. Etat : Brand New. 296 pages. 9.25x6.10x0.68 inches. In Stock.
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
EUR 91,95
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New. In.
Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
EUR 89,63
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : As New. Unread book in perfect condition.
EUR 107,03
Quantité disponible : Plus de 20 disponibles
Ajouter au panierEtat : New.
Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
EUR 91,94
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Ajouter au panierEtat : New.
EUR 50,25
Quantité disponible : 5 disponible(s)
Ajouter au panierTaschenbuch. Etat : Neu. Compound Semiconductor Device Modelling | Christopher M. Snowden (u. a.) | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9781447120506 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
EUR 59,97
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Ajouter au panierTaschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Langue: anglais
Edité par World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : AussieBookSeller, Truganina, VIC, Australie
EUR 95,87
Quantité disponible : 1 disponible(s)
Ajouter au panierPaperback. Etat : new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
Langue: anglais
Edité par World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10 : 981023693X ISBN 13 : 9789810236939
Vendeur : Rarewaves.com UK, London, Royaume-Uni
EUR 51,54
Quantité disponible : 14 disponible(s)
Ajouter au panierPaperback. Etat : New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.