Semiconductor devices textbook (18 résultats)

Etat : Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings. In good all round condition. Dust jacket in fair condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,550grams, ISBN.…

Cloth. Etat : As New. No DJ. First Edition. This is a fine, as new, hardcover first edition copy in black cloth binding, no DJ. Gold spine lettering.

Paperback. Etat : Brand New. 178 pages. 8.75x5.50x0.41 inches. In Stock.

Etat : New.

Etat : New. In English.

Etat : New.

Etat : New. 1st edition NO-PA16APR2015-KAP.

perfect. Etat : Gut. 374 Seiten; 9783110703405.3 Gewicht in Gramm: 1.

paperback. Etat : Good. Paperback. Pub Date: 1980 Pages: 1 in Publisher: of Qiqihar power semiconductor devices factory. see the book Shadow on a 1980s ~ ~ ~.

Paperback. Etat : Fair. Revised, Subsequent. The item might be beaten up but readable. May contain markings or highlighting, as well as stains, bent corners, or any other major defect, but the text is not obscured in any way.

Etat : good. The book is in good condition with all pages and cover intact, including the dust jacket if originally issued. The spine may show light wear. Pages may contain some notes or highlighting, and there might be a "From the library of" label. Boxed set packaging, shrink wrap, or included media like CDs may be missing.…

Etat : good. A copy that has been read, remains in good condition. All pages are intact, and the cover is intact. The spine and cover show signs of wear. Pages can include notes and highlighting and show signs of wear, and the copy can include "From the library of" labels or previous owner inscriptions. 100% GUARANTEE! Shipped with delivery confirmation, if you're not satisfied with purchase please return item! Ships via media mail.…

paperback. Etat : New. Taking into account the educational requirements for vocational students. 21 centuries high series Textbook: Physics of Semiconductor Devices (New Version) at the time of the preparation to minimize the theoretical derivation and use plain language to explain the basic knowledge of semiconductor physics and transistor the basic principles. The book is divided into 10 chapters. the first chapter introduces the basics of semiconductor physics. Chapter 2 describes the characteristics of the PN j.…

paperback. Etat : New. Ship out in 2 business day, And Fast shipping, Free Tracking number will be provided after the shipment.Paperback. Pub Date :2012-07-01 Pages: 258 Publisher: Electronic Industry Press book edge kc11.21 basic information about the title: foreign electronic communication textbook series: modern integrated circuit semiconductor devices List Price: 49.00 yuan Author: Hu Zhengming published Social: Electronic Industry Press Publication Date: July 1. 2012 ISBN: 9.787.121.176.623 words: Page: 258 Edition: 1st Edition Binding: Paperback: Weight: 399 g Editor's Choice foreign electronic communication textbook series: modern integrated circuit semiconductor devices as colleges Microelectronics undergraduate course textbook or reference books. are also available for reference in the relevant work in the field of professional and technical personnel. Executive Summary abroad Electronics and Communication textbook series: modern integrated circuit semiconductor devices system introduced in modern integrated circuit semiconductor devices. is to go into the details of the physical mechanisms of semiconductor devices and works with the practice of combining a textbook. Foreign electronic communications textbook series: modern integrated circuit semiconductor devices is not the usual form of classification of electronic devices. optoelectronic devices. microwave devices. but stressed that the common semiconductor devices. focusing on the PN junction. metal-semiconductor contact bipolar transistors and MOSFET. and several other basic device structure and theory. on this basis. the introduction of other important semiconductor devices such as solar cells. LED. a diode laser. CCD and CMOS image sensors. HEMT devices and memory or the like. Contents Chapter 1 in the semiconductor crystal structure of the electrons and holes 1.1 silicon 1.2 electrons and holes into the key model 1.3 band models 1.4 semiconductor. insulator and conductor 1.5 electron and a hole 1.7 1.6 density of states of thermal equilibrium and Fermi function of 1.8 electron and hole concentration 1.9n and the general theory of p 1.10 1.11 Chapter Summary Exercises References Readings Chapter 2. the movement of electrons and holes with the thermal motion of the composite 2.1 2.2 Drift 2.3 diffusion current in extreme temperature carrier concentration Einstein relation between the relationship between 2.5D and 2.4 band diagram with V. 2.6 electron hole recombination 2.7 hot 2.8 quasi-equilibrium and quasi-Fermi level 2.9 Chapter Summary Exercises References Chapter 3 Readings device manufacturing technology the 3.1 device manufacturing Introduction 3.2 silicon oxidation transfer lithography 3.4 graphics 3.3 - 3.5 doped with 3.6 dopant diffusion is etched thin film deposition 3.8 interconnect 3.7 - 3.10 Chapter Summary backend process 3.9 test. assembly and qualification - a device for producing instance Problem Reference Document Readings Chapter 4 of the PN junction and the metal-semiconductor junction 1 part: the 4.2 depletion layer of the theoretical basis of the PN junction 4.1PN Results model 4.3 4.5 Results of the reverse biased PN junction 4.4 capacitor voltage characteristic - quasi-equilibrium boundary condition 4.7 current continuity equation 4.8 is biased PN junction excess carrier 4.9PN I V characteristics of the junction diode breakdown 4.6 forward bias carrier injection 4.10 charge storage diode 4.11 Part 2: PN junction of the small-signal model optoelectronic devices 4.12 solar battery 4.13 4.14 diode laser 4.15 photodiode Part 3: metal semiconductor junction 4.16Schottky barrier of light-emitting diode and solid-state lighting 4.17 Thermal Emission the theory 4.18Schottky diode 4.19Schottky 4.20 diode applications quantum mechanical tunneling 4.21 ohmic contact 4.22 This chapter Summary Exercises References Readings Chapter 5 MOS capacitor 5.1 flatband conditions for peace with accumulated 5.3 surface depleted strong inversion 5.4 threshold voltage of 5.5 higher tha.…

Etat : Fine. Number of books£º1.

paperback. Etat : New. Paperback Pages Number: 598 Language: Chinese. Semiconductor Device Physics (3rd edition) has built up the advanced learning and reference model of this classic in the field of semiconductor devices. The book retains the most detailed knowledge of semiconductor devices. and has been updated and re-organization. reflecting the enormous progress in the concepts and performance of today's devices. which allows readers to quickly understand today's semiconductor physics performance characteristic.…

paperback. Etat : New. Paperback. Pub Date: 2013 Pages: 592 Language: Chinese in Publisher: Electronic Industry Press foreign electronic communications textbook series: power semiconductor devices foundation system introduces the various types of power semiconductor devices widely used in the field of power electronics. Progressive approach to the basic structure of the device. the physical mechanism. the design principles and application reliability. content mainly to silicon power semiconductor devices. and also .…

paperback. Etat : New. Paperback. Pub Date: 2013 Pages: 592 Language: Chinese in Publisher: Electronic Industry Press foreign electronic communications textbook series: power semiconductor devices foundation system introduces the various types of power semiconductor devices widely used in the field of power electronics. Progressive approach to the basic structure of the device. the physical mechanism. the design principles and application reliability. content mainly to silicon power semiconductor devices. and also .…