Semiconductor interfaces formation properties (13 résultats)
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Semiconductor Interfaces: Formation and Properties : Proceedings of the Workkshop, Les Houches, France February 24?march 6, 1987
Lelay, Guy (EDT); Derrien, Jacques (EDT); Boccara, Nino (EDT)
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Semiconductor Interfaces: Formation and Properties : Proceedings of the Workkshop, Les Houches, France February 24?march 6, 1987
Lelay, Guy (EDT); Derrien, Jacques (EDT); Boccara, Nino (EDT)
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Semiconductor Interfaces: Formation and Properties : Proceedings of the Workkshop, Les Houches, France February 24?march 6, 1987
Lelay, Guy (EDT); Derrien, Jacques (EDT); Boccara, Nino (EDT)
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Semiconductor Interfaces: Formation and Properties : Proceedings of the Workkshop, Les Houches, France February 24?march 6, 1987
Lelay, Guy (EDT); Derrien, Jacques (EDT); Boccara, Nino (EDT)
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Semiconductor Interfaces: Formation and Properties: Proceedings of the Workkshop, Les Houches, France February 24 March 6, 1987 (Springer Proceedings in Physics)
LeLay, Guy (Editor) / Derrien, Jacques (Editor) / Boccara, Nino (Editor)
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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of n…ew thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AllemagneBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the…elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success. 408 pp. Englisch.
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been a…chieved in the elaboration of new th.
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elab…oration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 408 pp. Englisch.
