spectroscopy semiconductor microstructures (10 résultats)

Paperback. Etat : new. Paperback. IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech- nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett.49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett. Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989 Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett. 49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett.

Paperback. Etat : new. Paperback. IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech- nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett.49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett. Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989 Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett. 49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett. 684 pp. Englisch.

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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett. 49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 684 pp. Englisch.