Articles liés à CMOS Gate-Stack Scaling ― Materials, Interfaces...

CMOS Gate-Stack Scaling ― Materials, Interfaces and Reliability Implications: Volume 1155 - Couverture rigide

 
9781605111285: CMOS Gate-Stack Scaling ― Materials, Interfaces and Reliability Implications: Volume 1155

Synopsis

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

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Présentation de l'éditeur

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.