Langue: anglais
Edité par Princeton University Press, 2010, 2010
ISBN 10 : 0691127247 ISBN 13 : 9780691127248
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Edition originale
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Ajouter au panierSoft cover. Etat : New. Lorraine Betz Doneker (illustrateur). 1st Edition. Quarto, softcover, new in brown and black pictorial wraps. 261 pp. inluding glossary and index plus list of contributors. introduces undergraduate students to quantitative models and methods in ecology, behavioral ecology, evolutionary biology, and conservation. It explores the core concepts shared by these related fields using tools and practical skills such as experimental design, generating phylogenies, basic statistical inference, and persuasive grant writing. --- featuring a collaborative "active learning" approach that emphasizes hands-on learning. Every chapter has exercises that enable students to work directly with the material at their own pace and in small groups.
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Ajouter au panierEtat : New. pp. 548.
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
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Ajouter au panierEtat : New. In.
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Ajouter au panierEtat : New. pp. 548.
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Ajouter au panierGebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Doneker, J.Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This .
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Ajouter au panierEtat : New. pp. 548 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam This item is printed on demand.
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Ajouter au panierHRD. Etat : New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Ajouter au panierHRD. Etat : New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Ajouter au panierBuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.