dutton robert w (38 résultats)

Mass Market Paperback. Etat : Good. Dutton & Sherman (Cover Design); Walter Appleton Clark (Cover Art) (illustrateur). 536 pp. Solidly bound copy with moderate use. Front cover torn along bottom edge. Slightly slanted spine.

Soft cover. Etat : Very Good. ORIGINAL 1979 PUBLICATION; softcover; ex-corporate library; light creasing of corners of covers and a few leaves; o/w in very good condition. Book.

Soft cover. Etat : Very Good. ORIGINAL 1979 PUBLICATION; softcover; owner's blind stamps; o/w in very good condition. Book.

Softcover. First Edition, First Printing. Book condition is Very Good, bound in wraps. Some rubbing and edgewear to exterior. Text is clean and unmarked. ; 4to. 11"h x 8 1/2"w. Contents: The Technical and Ethical Aspects of Risk Communication : Frederick W. Allen, Leslie I. Boden, Phil Brown, Rosemary A. Chalk, Richard Davies, Thomas Dietz, Diana B. Dutton, Timothy Edgar, June Fessenden-Raden, Baruch Fischhoff, Janet M. Fitchen, John C. Fletcher, Vicki S. Freimuth, Sharon L. Hammond, Alice J. Hausman, Jenifer S. Heath, Stephen Hilgartner, Sheila Jasanoff, Richard P. Keeling, Sheldon Krimsky, Allan Mazur, David Ozonoff, Carolyn Needleman, Dorothy Nelkin, Alonzo Plough, Deborah Prothrow-Stith, James L. Regens, Judy B. Rosener, Sallie C. Russell, Robert W. Rycroft, Howard Spivak, Dorothy C. Wertz, Rae Zimmerman.

hardcover. Etat : Good. Hardcover ex-library with typical marks shows moderate cover wear. Text is unmarked. Ships FAST!

Etat : New. In.

Paperback. Etat : New.

Etat : good. This book is in Good condition. There may be some notes and highligting but otherwise the book is in overall good condition.

Etat : New. pp. 638.

Paperback. Etat : Brand New. 636 pages. 9.25x6.10x1.44 inches. In Stock.

Hardcover. Etat : Near Fine. Dust Jacket Included. 1st Edition. FIRST EDITION, first printing. Octavo (20 x 14cm), pp.x; 94. Publisher's green cloth titles in gilt to spine. Dust-jacket with printed price of 15s. to front flap. A little dustiness to edges, dust-jacket lightly handled, toned to spine. Near fine.

Taschenbuch. Etat : Neu. Neuware -P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.

Taschenbuch. Etat : Neu. Process and Device Simulation for MOS-VLSI Circuits | P. Antognetti (u. a.) | Taschenbuch | 636 S. | Englisch | 2011 | Springer | EAN 9789400968448 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.

Hardcover. Etat : New.

Original Cloth. 1st Edition. NATO ASI series. Series E, Applied sciences No. 62. 24 x 16 cm., xii, 619 pp. The book is covered in white cloth with black lettering on the spine and front. CONDITION. VG+/ no dj. The pages are clean and tight. The corners and ends of the spine are lightly rubbed. Library marks and labels on spine and front end papers. Library stamps on page edges. Ex-Library.

hardcover. Etat : Good. Good. Dust Jacket NOT present. CD WILL BE MISSING. . SHIPS FROM MULTIPLE LOCATIONS. book.

Hardcover. Etat : New. In shrink wrap. Looks like an interesting title!

Etat : New. In.

Etat : New. In.

hardcover. Etat : New. In shrink wrap. Looks like an interesting title!

Taschenbuch. Etat : Neu. Technology CAD - Computer Simulation of IC Processes and Devices | Robert W. Dutton (u. a.) | Taschenbuch | xvii | Englisch | 2012 | Springer | EAN 9781461364085 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Etat : New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . .

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model .

Hardcover. Etat : Like New. Like New. book.

Etat : New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . . Books ship from the US and Ireland.

Hardcover. Etat : Very Good. 8vo., 396 pp. Black and white illustrations. Index.

Etat : new. Questo è un articolo print on demand.

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations. 636 pp. Englisch.

Etat : New. PRINT ON DEMAND pp. 638.