J clevenger (81 résultats)

paperback. Etat : Very Good. Connecting readers with great books since 1972! Used books may not include companion materials, and may have some shelf wear or limited writing. We ship orders daily and Customer Service is our top priority.

Etat : New.

Etat : good. Supports Goodwill of Silicon Valley job training programs. The cover and pages are in Good condition! Any other included accessories are also in Good condition showing use. Use can include some highlighting and writing, page and cover creases as well as other types visible wear.

Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : Very Good. : Descubre la fascinante vida del oso pardo en este libro de Anthony P. Clevenger y Francisco J. Purroy. A través de sus 64 páginas, el libro nos adentra en el mundo de este gigante acorralado, explorando su hábitat, comportamiento y los desafíos que enfrenta en la actualidad. Con ilustraciones a color, esta monografía es una lectura imprescindible para los amantes de la naturaleza y aquellos interesados en la conservación de la fauna ibérica. EAN: 9788480125628 Tipo: Libros Categoría: Ciencias Título: El oso pardo Autor: Anthony P. Clevenger| Francisco J. Purroy Editorial: Edilesa. Idioma: es-ES Páginas: 64 Formato: tapa blanda.…

Etat : New. In English.

Etat : New. Sexton, Cody (illustrateur).

Hardback. Etat : Excellent condition. Etat de la jaquette : No dust jacket, as issued. 1 v. (varous pagings) ill. 24 cm. a few numbers written on title page.

Soft cover. Etat : Good. ORIGINAL 1923 PUBLICATION; in Stiff Cardboard Covers; missing folded map; ex-library; spine reinforced with tape; minor shelfwear; light tanning of leaves; last couple of leaves w/ nicks on fore-edge (repaired); o/w in good condition. Book.

PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000.

PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000.

Etat : New.

Etat : New. In English. Sexton, Cody (illustrateur).

Etat : New. In English.

HRD. Etat : New. New Book. Shipped from UK. Established seller since 2000.

Etat : New.

HRD. Etat : New. New Book. Shipped from UK. Established seller since 2000.

Etat : As New. Unread book in perfect condition.

Paperback. Etat : Brand New. 579 pages. 9.00x6.00x1.45 inches. In Stock.

Soft cover. Etat : Good. 1st Edition. Side-stapled printed brown paper wraps detached and chipped around edges, spine lettering missing; internally Very Good with slight age toning to paper, very minor damp stain around top edge of final few pages does not enter text; humongous folding color map detached with rear cover is in FINE condition, appears never opened.…

Etat : New.

Etat : New.

Etat : New. In English.

Etat : New. pp. 254.

Etat : New.

Paperback. Etat : New. Print on Demand. This book assesses how various pollutants generated from smoke and gas emissions impact the local environment and human health. The author analyzes scientific reports on experiments conducted to establish causal links between specific pollutants and phenomena like tree deaths, respiratory ailments, and the degradation of building materials. The book also examines the role of meteorological conditions in shaping the impact of different pollutants. It draws on various sources, including historical observations, laboratory experiments, and meteorological data, providing a comprehensive and evidence-based overview of the multifaceted effects of smoke and gas pollution on our environment and well-being. This book is a reproduction of an important historical work, digitally reconstructed using state-of-the-art technology to preserve the original format. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in the book. print-on-demand item.…

Buch. Etat : Neu. Neuware - This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.…

Gebunden. Etat : New.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered.…