flux profile modeling using de vijayagopal ramprasad (5 résultats)

Taschenbuch. Etat : Neu. Neuware -Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers.Books on Demand GmbH, Überseering 33, 22297 Hamburg 104 pp. Englisch.

Taschenbuch. Etat : Neu. Flux Profile Modeling using Monte Carlo Simulation | A simulation tool for deposition processess using Molecular Beam Epitaxy | Ramprasad Vijayagopal (u. a.) | Taschenbuch | 104 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838369389 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers. 104 pp. Englisch.

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Vijayagopal RamprasadR. Vijayagopal received his masters degree in electrical engineering from the University of Nevada in 2004 and the University of Minnesota in 2006. His graduate thesis work at the University of Nevada has been.

Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers.