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  • Langue : anglais

    Edité par ISTE Press - Elsevier, 2017

    1785480960 / 9781785480966

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    Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AllemagneBuchWeltWeit Ludwig Meier e.K.

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    Etat: Neuf

    EUR 57,95

    EUR 23,00 expédition 
    Expédition depuis Allemagne vers Etats-Unis

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    Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent.Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography.This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Englisch.…

  • Langue : anglais

    Edité par ISTE Press - Elsevier, 2017

    1785480960 / 9781785480966

    • Couverture rigide
    • impression à la demande

    Vendeur : AHA-BUCH GmbH, Einbeck, AllemagneAHA-BUCH GmbH

    Vendeur avec une évaluation de 5 étoiles
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    Etat: Neuf

    EUR 61,71

    EUR 35,00 expédition 
    Expédition depuis Allemagne vers Etats-Unis

    Quantité disponible : 2 disponibles

    Buch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent.Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography.This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization.…