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Edité par McGraw-Hill Education - Europe, US, 2012
ISBN 10 : 007175427X ISBN 13 : 9780071754279
Langue: anglais
Vendeur : Rarewaves USA, OSWEGO, IL, Etats-Unis
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Ajouter au panierHardback. Etat : New. Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.Coverage includes:Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown.
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Ajouter au panierGebunden. Etat : New. Filled with practical examples, this is a comprehensive reference on process reliability for semiconductor process and design engineers.Über den AutorrnrnnZhenghao Gan is a reliability technical manager at the Semiconductor Ma.
Edité par McGraw-Hill Education - Europe, 2012
ISBN 10 : 007175427X ISBN 13 : 9780071754279
Langue: anglais
Vendeur : CitiRetail, Stevenage, Royaume-Uni
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Ajouter au panierHardcover. Etat : new. Hardcover. Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.Coverage includes:Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown Filled with practical examples, this is a comprehensive reference on process reliability for semiconductor process and design engineers. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Edité par McGraw-Hill Education - Europe, US, 2012
ISBN 10 : 007175427X ISBN 13 : 9780071754279
Langue: anglais
Vendeur : Rarewaves USA United, OSWEGO, IL, Etats-Unis
EUR 216,39
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Ajouter au panierHardback. Etat : New. Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.Coverage includes:Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown.
Edité par McGraw-Hill Education - Europe, US, 2012
ISBN 10 : 007175427X ISBN 13 : 9780071754279
Langue: anglais
Vendeur : Rarewaves.com USA, London, LONDO, Royaume-Uni
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Ajouter au panierHardback. Etat : New. Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.Coverage includes:Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown.
Edité par MCGRAW-HILL Professional Okt 2012, 2012
ISBN 10 : 007175427X ISBN 13 : 9780071754279
Langue: anglais
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
EUR 238,83
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Ajouter au panierBuch. Etat : Neu. Neuware - Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Edité par McGraw-Hill Education - Europe, US, 2012
ISBN 10 : 007175427X ISBN 13 : 9780071754279
Langue: anglais
Vendeur : Rarewaves.com UK, London, Royaume-Uni
EUR 253,50
Autre deviseQuantité disponible : Plus de 20 disponibles
Ajouter au panierHardback. Etat : New. Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.Coverage includes:Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown.