Herner a (35 résultats)

Hardcover. Etat : Very Good. No Jacket. Former library book; May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less.

Hardback. Etat : Excellent condition. Etat de la jaquette : No dust jacket, as issued. 1 v. (varous pagings) ill. 24 cm. a few numbers written on title page.

Soft cover. Etat : Good. Softcover reprint of the hardcover 1st edition 1996. Does not have diskette.

Hardcover. Etat : Very Good. Connecting readers with great books since 1972! Used books may not include companion materials, and may have some shelf wear or limited writing. We ship orders daily and Customer Service is our top priority.

Hardcover. Etat : Good. No Jacket. Missing dust jacket; Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less.

Etat : good. Good condition. A copy that has been read but remains in clean condition. All pages are intact and the cover is intact. The spine and cover may show signs of wear. Pages can include limited notes and highlighting, and the copy can include "From the library of" labels or previous owner inscriptions. 100% GUARANTEE! Shipped with delivery confirmation. If you're not satisfied with purchase please return with no hassle.…

Etat : New.

Etat : New.

Etat : New. In English.

Etat : New. pp. 254.

Etat : New.

Etat : New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered.…

Etat : New. In English.

Etat : New. In English.

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Identifying and remediating environmental contamination is a complex and very expensive problem worldwide. Pollution of soil and water by pesticides is a significant issue that persists for years after the pesticide application ceases. Pesticide Properties in the Environment is a unique database compiled from extensive literature searches. It presents data on hundreds of pesticides, including their common, commercial, and scientific names, their chemical formulas, and their environmental properties including water solubility, field half-life, sorption coefficient, and vapor pressure. All data is carefully cited to original references, and is presented both in printed form and as an electronic database. Pesticide Properties in the Environment will be invaluable for environmental scientists, engineers, and consultants, as well as soil scientists and water quality specialists.…

Etat : New. pp. 240.

Hardcover. Etat : Brand New. hardback/disk edition. 227 pages. 9.75x6.50x0.75 inches. In Stock.

Etat : New. Satisfaction Guaranteed or your money back.

Etat : gut. Pesticide Properties in the Environment In englischer Sprache. pages.

hardcover. Etat : Sehr gut. 600 Seiten; 9783778238004.2 Gewicht in Gramm: 2.

Taschenbuch. Etat : Neu. Schiffbau | Heinrich Herner (u. a.) | Taschenbuch | 236 S. | Deutsch | 2012 | Maritimepress | EAN 9783954270941 | Verantwortliche Person für die EU: Europäischer Literaturverlag, in Europäischer Hochschulverlag GmbH & Co. KG, Fahrenheitstr. 1, 28359 Bremen, order[at]eh-verlag[dot]de | Anbieter: preigu. …

PF. Etat : New. This item is printed on demand. Brand new book, sourced directly from publisher. Dispatch time is 6-7 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Buch. Etat : Neu. Kfz-Elektrik, Elektronik | Anton Herner (u. a.) | Buch | Die Meisterprüfung | 850 S. | Deutsch | 2023 | Vogel Business Media | EAN 9783834334978 | Verantwortliche Person für die EU: Vogel Communications Group GmbH & Co. KG, Max-Planck-Str. 7/9, 97082 Würzburg, produktsicherheit[at]vogel[dot]de | Anbieter: preigu. …

Paperback / softback. Etat : New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.

Etat : New. Print on Demand pp. 254.

Etat : New. PRINT ON DEMAND pp. 254.

Hardcover. Etat : Fine. Etat de la jaquette : Near Fine. 2nd Edition. This copy is the 1984 Revised edition of the 1979 original, NOT PRINT ON DEMAND. It is in excellent condition with no negative issues. The dustjacket, in clear mylar covering has several very small tears that were repaired internally and the book will be carefully wrapped and boxed for safe shipping.…

Paperback. Etat : new. Paperback. As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.KlappentextThe MRS Symposium Proceeding series is an internationally recognised reference suitable for research.…