Wayne e eikenberry (17 résultats)

Etat : New.

Paperback or Softback. Etat : New. Carrier Lifetime Dynamics of Epitaxial Layer HVPE Gallium Arsenide Using Time-Resolved Experiments. Book.

Paperback. Etat : New.

Etat : New. In English.

Etat : New.

Taschenbuch. Etat : Neu. Neuware - GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE), unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.…

Etat : New. KlappentextrnrnGaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fa.

PAP. Etat : New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Etat : As New. Unread book in perfect condition.

Etat : As New. Unread book in perfect condition.

Paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Paperback. Etat : New.

PAP. Etat : New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Etat : New. Print on Demand pp. 82.

Etat : New. Print on Demand pp. 82.

Etat : New. PRINT ON DEMAND pp. 82.

Paperback / softback. Etat : New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.