gate stack silicide issues de clevenger (15 résultats)

Hardback. Etat : Excellent condition. 1 v. (varous pagings) ill. 24 cm. a few numbers written on title page.

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Paperback. Etat : new. Paperback. As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

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Original Boards. Etat : As New. Etat de la jaquette : No Dust Jacket. First Edition; First Edition. With illustrations. Stamped Damaged to verso title page. Otherwise new. ; Hardcover; Octavo; As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL.

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Paperback. Etat : New.

Paperback. Etat : new. Paperback. As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Paperback. Etat : new. Paperback. As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered.

Paperback / softback. Etat : New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days 350.

Paperback. Etat : Brand New. 1st edition. 254 pages. 9.02x5.98x0.55 inches. In Stock. This item is printed on demand.

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.KlappentextThe MRS Symposium Proceeding series is an internationally recognised reference suitable for research.