Griscom david l (27 résultats)

Hardcover. Etat : Near Fine. No Dust Jacket. First Edition. A Near Fine copy in pictorial hard covers. Light sun-fading at the spine (not affecting lettering), light rubbing to the bottom edges of the covers, else about as new. No dust jacket, apparently as issued. Book.

Hardcover. Etat : sehr gut. Hardcover gr. 8°. xiii, 379 pages, name on title, some small marks of use, sehr gutes Exemplar. in englischer Sprache.

Softcover. Hardcover 624 pages. with Figures and tables. In good clean, solid condition. Nato Science Series II. Mathematics, Physics and Chemistry Vol. 2. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000. in englischer Sprache (in english).

Etat : New.

Etat : New.

Etat : New.

Etat : New. In English.

Etat : New. In English.

Etat : As New. Unread book in perfect condition.

Etat : As New. Unread book in perfect condition.

Etat : New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, G.; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 155 x 34. Weight in Grams: 1061. . 2000. Hardback. . . . . …

Etat : New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892. . 2000. Softcover reprint of the original 1st ed. 2000. Paperback. . . . . …

Etat : New. pp. 636.

Etat : New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, G.; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 155 x 34. Weight in Grams: 1061. . 2000. Hardback. . . . . Books ship from the US and Ireland. …

Paperback. Etat : Brand New. 632 pages. 9.50x6.50x1.50 inches. In Stock.

Etat : New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892. . 2000. Softcover reprint of the original 1st ed. 2000. Paperback. . . . . Books ship from the US and Ireland. …

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.…

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.…

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox.…

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox.…

Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch.…

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch.…

Buch. Etat : Neu. Defects in SiO2 and Related Dielectrics: Science and Technology | Gianfranco Pacchioni (u. a.) | Buch | NATO Science Series II: Mathematics, Physics and Chemistry | viii | Englisch | 2000 | Springer Netherland | EAN 9780792366850 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.…

Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.…

Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.…

Etat : New. Print on Demand pp. 636 Illus.

Etat : New. PRINT ON DEMAND pp. 636.