Pavlov andrei (56 résultats)

Paperback or Softback. Etat : New. ??????? ????????? ?????&. Book.

Paperback. Etat : Fair. No Jacket. Readable copy. Pages may have considerable notes/highlighting. ~ ThriftBooks: Read More, Spend Less.

Etat : New.

Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : Very Good. 1 Edition. Former library copy. Pages intact with possible writing/highlighting. Binding strong with minor wear. Dust jackets/supplements may not be included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.…

N.A. Etat : New. ISBN:9788132202325.

Etat : As New. Unread book in perfect condition.

Etat : New. In English.

Etat : good. May show signs of wear, highlighting, writing, and previous use. This item may be a former library book with typical markings. No guarantee on products that contain supplements Your satisfaction is 100% guaranteed. Twenty-five year bookseller with shipments to over fifty million happy customers.…

Etat : As New. Unread book in perfect condition.

Etat : New.

Etat : New.

Etat : New. pp. 248.

Etat : As New. Unread book in perfect condition.

Etat : New. pp. 248.

Etat : New.

Paperback. Etat : New.

Etat : good. May show signs of wear, highlighting, writing, and previous use. This item may be a former library book with typical markings. No guarantee on products that contain supplements Your satisfaction is 100% guaranteed. Twenty-five year bookseller with shipments to over fifty million happy customers.…

Etat : New.

Paperback. Etat : Brand New. 1st edition. 248 pages. 8.25x5.25x0.50 inches. In Stock.

Paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Etat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.…

Etat : Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.…

Etat : New. In English.

Etat : New. In English.

Etat : New.

Etat : New.

Etat : As New. Unread book in perfect condition.

Etat : As New. Unread book in perfect condition.