cmos sram circuit design (48 résultats)

Soft cover. Etat : New. ISBN:9788132202325.

hardcover. Etat : As New. Ships Out Tomorrow!

hardcover. Etat : Very Good.

Etat : New.

Hardcover. Etat : new. Hardcover. Modern computing enginesCPUs, GPUs, and NPUsrequire extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 A node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Etat : New.

Etat : As New. Unread book in perfect condition.

Etat : New. In.

Etat : New.

Etat : New.

Hardback. Etat : New. 2025 ed. Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes.

Etat : As New. Unread book in perfect condition.

Etat : New.

Hardcover. Etat : new. Hardcover. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Etat : New.

Paperback. Etat : new. Paperback. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Etat : New.

Etat : New.

Etat : New. In.

Etat : New. In.

Etat : New.

Hardcover. Etat : new. Hardcover. Modern computing enginesCPUs, GPUs, and NPUsrequire extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 A node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

Hardcover. Etat : new. Hardcover. Modern computing enginesCPUs, GPUs, and NPUsrequire extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 A node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Buch. Etat : Neu. Neuware -Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch.

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes.

Etat : New.

Etat : As New. Unread book in perfect condition.

Hardcover. Etat : Brand New. 350 pages. 9.25x6.10x9.21 inches. In Stock.

Hardback. Etat : New. 2025 ed. Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes.

Hardback. Etat : New. 2025 ed. Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes.